MMBF170
- Mfr.Part #
- MMBF170
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 500MA SOT23
- Stock
- 29,069
- In Stock :
- 29,069
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds :
- 40 pF @ 10 V
- Power Dissipation (Max) :
- 300mW (Ta)
- Drain to Source Voltage (Vdss) :
- 60 V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 200mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 500mA (Ta)
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Technology :
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23-3
- Vgs (Max) :
- ±20V
- FET Feature :
- -
- Datasheets
- MMBF170
N-Channel Tape & Reel (TR) 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-236-3, SC-59, SOT-23-3
The MMBF170 N-Channel MOSFET is incorperated with Onsemi's patented, high cell density, DMOS technology. The MMBF170 has been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. The MMBF170 is suitable for most applications requiring up to 500 mA DC.
MMBF170 Transistor Features
Low On-Resistance and High Density
Low Gate Threshold Voltage
Low Input Capacitance
High Saturation Current Capability
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant
MMBF170 Transistor Applications
Power MOSFET Gate Drivers
Switching
Servo Motor Control
Amplifiers
Safety Devices
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