MCH3209-TL-E
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- Mfr.Part #
- MCH3209-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A 3MCPH
- Stock
- 11,334
- In Stock ：
- 11,334
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 450MHz
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 155mV @ 75mA, 1.5A
- Product Status :
- Obsolete
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C (TJ)
- Power - Max :
- 800 mW
- Supplier Device Package :
- 3-MCPH
- Current - Collector (Ic) (Max) :
- 3 A
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA, 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Datasheets
- MCH3209-TL-E
NPN 150°C TJ 100nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MCH3209-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 155mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 3A volts.
MCH3209-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 155mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V
MCH3209-TL-E Applications
There are a lot of ON Semiconductor
MCH3209-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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