IXKC19N60C5

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Mfr.Part #
IXKC19N60C5
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 600V 19A ISOPLUS220
Stock
26,396
In Stock :
26,396

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Package / Case :
ISOPLUS220™
Mounting Type :
Through Hole
FET Type :
N-Channel
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
125mOhm @ 16A, 10V
Technology :
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds :
2500 pF @ 100 V
Product Status :
Active
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
Super Junction
Gate Charge (Qg) (Max) @ Vgs :
70 nC @ 10 V
Drain to Source Voltage (Vdss) :
600 V
Current - Continuous Drain (Id) @ 25°C :
19A (Tc)
Supplier Device Package :
ISOPLUS220™
Operating Temperature :
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id :
3.5V @ 1.1mA
Datasheets
IXKC19N60C5
VESS Electronics offers Transistors - FETs, MOSFETs - Single Littelfuse IXKC19N60C5, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:ISOPLUS220™, Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), IXKC19N60C5 pinout, IXKC19N60C5 datasheet PDF, IXKC19N60C5 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKC19N60C5 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tube 125m Ω @ 16A, 10V ±20V 2500pF @ 100V 70nC @ 10V 600V ISOPLUS220™

IXKC19N60C5 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 708 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2500pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 19A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [19 A] according to its drain current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXKC19N60C5 Features


the avalanche energy rating (Eas) is 708 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 600V voltage
a 600V drain to source voltage (Vdss)


IXKC19N60C5 Applications


There are a lot of IXYS
IXKC19N60C5 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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