ISP25DP06LMSATMA1
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- Mfr.Part #
- ISP25DP06LMSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 1.9A SOT223
- Stock
- 20,465
- In Stock ：
- 20,465
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 13.9 nC @ 10 V
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Technology :
- MOSFET (Metal Oxide)
- Rds On (Max) @ Id, Vgs :
- 250mOhm @ 1.9A, 10V
- FET Feature :
- -
- Package / Case :
- TO-261-4, TO-261AA
- Supplier Device Package :
- PG-SOT223
- Product Status :
- Active
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A (Ta)
- Drain to Source Voltage (Vdss) :
- 60 V
- Power Dissipation (Max) :
- 1.8W (Ta), 5W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Vgs(th) (Max) @ Id :
- 2V @ 270µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 420 pF @ 30 V
- Datasheets
- ISP25DP06LMSATMA1
P-Channel Tape & Reel (TR) 250m Ω @ 1.9A, 10V ±20V 420pF @ 30V 13.9nC @ 10V 60V TO-261-3
ISP25DP06LMSATMA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 420pF @ 30V maximal input capacitance.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
ISP25DP06LMSATMA1 Features
a 60V drain to source voltage (Vdss)
ISP25DP06LMSATMA1 Applications
There are a lot of Infineon Technologies
ISP25DP06LMSATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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