IRGP4263PBF

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Mfr.Part #
IRGP4263PBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT W/ULTRAFAST SOFT RECOVERY D
Stock
6,296
In Stock :
6,296

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Power - Max :
300 W
Td (on/off) @ 25°C :
70ns/140ns
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 48A
Voltage - Collector Emitter Breakdown (Max) :
650 V
Reverse Recovery Time (trr) :
-
Current - Collector Pulsed (Icm) :
192 A
Supplier Device Package :
TO-247AC
Input Type :
Standard
Package / Case :
TO-247-3
Current - Collector (Ic) (Max) :
90 A
Mounting Type :
Through Hole
IGBT Type :
-
Test Condition :
400V, 48A, 10Ohm, 15V
Switching Energy :
1.7mJ (on), 1mJ (off)
Gate Charge :
150 nC
Product Status :
Active
Operating Temperature :
-40°C ~ 175°C (TJ)
Datasheets
IRGP4263PBF
VESS Electronics offers Transistors - IGBTs - Single International Rectifier IRGP4263PBF, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-40°C ~ 175°C (TJ), IRGP4263PBF pinout, IRGP4263PBF datasheet PDF, IRGP4263PBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRGP4263PBF ,we also present a selection of IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

IRGP4263PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP4263PBF Description


The IRGP4263PBF is an IGBT 650 V 90 A 300 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.



IRGP4263PBF Features


  • VCES = 650V

  • IC = 60A, TC =100°C

  • tSC ≥ 5.5μs, TJ(max) = 175°C

  • VCE(ON) typ. = 1.7V @ IC = 48A

  • Low VCE(ON) and switching losses

  • Square RBSOA and maximum junction temperature 175°C

  • Positive VCE (ON) temperature coefficient

  • 5.5μs short circuit SOA

  • Lead-free, RoHS compliant



IRGP4263PBF Applications


  • UPS

  • Welding

  • Industrial Motor Drive

  • Inverters


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