IRFH7440TRPBF
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- Mfr.Part #
- IRFH7440TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 85A 8PQFN
- Stock
- 24,507
- In Stock ：
- 24,507
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 104W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 138 nC @ 10 V
- FET Feature :
- -
- Drain to Source Voltage (Vdss) :
- 40 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id :
- 3.9V @ 100µA
- Supplier Device Package :
- 8-PQFN (5x6)
- Package / Case :
- 8-PowerTDFN
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 2.4mOhm @ 50A, 10V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4574 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C :
- 85A (Tc)
- Technology :
- MOSFET (Metal Oxide)
- Datasheets
- IRFH7440TRPBF
N-Channel Tape & Reel (TR) 2.4m Ω @ 50A, 10V ±20V 4574pF @ 25V 138nC @ 10V 8-PowerTDFN
IRFH7440TRPBF Description
The IRFH7440TRPBF is a HEXFET? single N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFH7440TRPBF is suitable for PWM inverter topologies, battery-powered circuits, half-bridge, and full-bridge topologies, electronic ballast applications, and synchronous rectifier applications.
IRFH7440TRPBF Features
-
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
-
Fully Characterized Capacitance and Avalanche SOA
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Enhanced body diode dV/dt and dI/dt Capability
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RoHS Compliant containing no Lead, no Bromide, and no Halogen
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Operating Junction and Storage Temperature Range: -55 to 150℃
IRFH7440TRPBF Applications
-
PWM inverter topologies
-
Battery-powered circuits
-
Half-bridge and full-bridge topologies
-
Electronic ballast applications
-
Synchronous rectifier applications
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