IRFB7537PBF
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- Mfr.Part #
- IRFB7537PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 173A TO220AB
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- -
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 100A, 10V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.7V @ 150µA
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 230W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 173A (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 210 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- Drain to Source Voltage (Vdss) :
- 60 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7020 pF @ 25 V
- Technology :
- MOSFET (Metal Oxide)
- Datasheets
- IRFB7537PBF
N-Channel Tube 3.3m Ω @ 100A, 10V ±20V 7020pF @ 25V 210nC @ 10V TO-220-3
IRFB7537PBF Description
A single N-channel power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness is the IRFB7537PBF from the HEXFET? family. Battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, as well as DC-to-AC inverters, can all use it.
IRFB7537PBF Features
-
Lead-Free, RoHS Compliant
-
Enhanced body diode dV/dt and dI/dt Capability
-
Fully Characterized Capacitance and Avalanche SOA
-
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
IRFB7537PBF Applications
-
Power Management
-
Motor Drive & Control
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