IPI072N10N3G

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Mfr.Part #
IPI072N10N3G
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Datasheet
Download
Description
OPTLMOS N-CHANNEL POWER MOSFET
Stock
11,000
In Stock :
11,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
-
Vgs(th) (Max) @ Id :
3.5V @ 90µA
FET Type :
N-Channel
Mounting Type :
Through Hole
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs :
68 nC @ 10 V
Vgs (Max) :
±20V
Supplier Device Package :
PG-TO262-3-1
Input Capacitance (Ciss) (Max) @ Vds :
4910 pF @ 50 V
Product Status :
Active
Rds On (Max) @ Id, Vgs :
7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Datasheets
IPI072N10N3G
VESS Electronics offers Transistors - FETs, MOSFETs - Single Infineon Technologies IPI072N10N3G, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA, Operating Temperature:-55°C ~ 175°C (TJ), IPI072N10N3G pinout, IPI072N10N3G datasheet PDF, IPI072N10N3G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI072N10N3G ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tube 7.2m Ω @ 80A, 10V ±20V 4910pF @ 50V 68nC @ 10V 100V TO-262-3 Long Leads, I2Pak, TO-262AA

IPI072N10N3GXK Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 160 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4910pF @ 50V.A device's drain current is its maximum continuous current, and this device's drain current is 80A.A maximum pulsed drain current of 320A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (6V 10V).

IPI072N10N3GXK Features


the avalanche energy rating (Eas) is 160 mJ
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)


IPI072N10N3GXK Applications


There are a lot of Infineon Technologies
IPI072N10N3GXK applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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