IPD80R900P7ATMA1

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Mfr.Part #
IPD80R900P7ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 6A TO252-3
Stock
21,572
In Stock :
21,572

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature :
-
Drain to Source Voltage (Vdss) :
800 V
Product Status :
Active
Drive Voltage (Max Rds On, Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
15 nC @ 10 V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
900mOhm @ 2.2A, 10V
Mounting Type :
Surface Mount
Power Dissipation (Max) :
45W (Tc)
Technology :
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :
3.5V @ 110µA
Input Capacitance (Ciss) (Max) @ Vds :
350 pF @ 500 V
Supplier Device Package :
PG-TO252-3
Operating Temperature :
-55°C ~ 150°C (TJ)
Vgs (Max) :
±20V
Datasheets
IPD80R900P7ATMA1
VESS Electronics offers Transistors - FETs, MOSFETs - Single Infineon Technologies IPD80R900P7ATMA1, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), IPD80R900P7ATMA1 pinout, IPD80R900P7ATMA1 datasheet PDF, IPD80R900P7ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD80R900P7ATMA1 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 900m Ω @ 2.2A, 10V ±20V 350pF @ 500V 15nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R900P7ATMA1 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 13 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 500V.Pulsed drain current is maximum rated peak drain current 14A.A normal operation of the DS requires keeping the breakdown voltage above 800V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPD80R900P7ATMA1 Features


the avalanche energy rating (Eas) is 13 mJ
based on its rated peak drain current 14A.
a 800V drain to source voltage (Vdss)


IPD80R900P7ATMA1 Applications


There are a lot of Infineon Technologies
IPD80R900P7ATMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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