FQA65N20
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- Mfr.Part #
- FQA65N20
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 44,453
- In Stock ：
- 44,453
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7900 pF @ 25 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 32mOhm @ 32.5A, 10V
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Technology :
- MOSFET (Metal Oxide)
- FET Feature :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 200 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C :
- 65A (Tc)
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 200 V
- Package / Case :
- TO-3P-3, SC-65-3
- Supplier Device Package :
- TO-3PN
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- Power Dissipation (Max) :
- 310W (Tc)
- Datasheets
- FQA65N20
N-Channel Tube 32m Ω @ 32.5A, 10V ±30V 7900pF @ 25V 200nC @ 10V TO-3P-3, SC-65-3
FQA65N20 Description
FQA65N20 is a type of N-channel QFET? MOSFET that is manufactured by ON Semiconductor based on the proprietary planar stripe and DMOS technology. On the basis of this technology, low on-state resistance, advanced switching performance, and high avalanche energy strength can be ensured. FQA65N20 is well suited for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA65N20 Features
-
Low on-state resistance
-
Advanced switching performance
-
High avalanche energy strength
-
Available in the TO-3PN package
-
Proprietary planar stripe and DMOS technology
FQA65N20 Applications
-
Electronic lamp ballasts
-
Switched-mode power supplies
-
Active power factor correction (PFC)
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