FQA34N20L

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Mfr.Part #
FQA34N20L
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 200V 34A TO3P
Stock
27,934
In Stock :
27,934

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
75mOhm @ 17A, 10V
Power Dissipation (Max) :
210W (Tc)
FET Feature :
-
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P
Vgs(th) (Max) @ Id :
2V @ 250µA
Operating Temperature :
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Drain to Source Voltage (Vdss) :
200 V
Product Status :
Obsolete
Technology :
MOSFET (Metal Oxide)
Package / Case :
TO-3P-3, SC-65-3
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs :
72 nC @ 5 V
FET Type :
N-Channel
Datasheets
FQA34N20L
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FQA34N20L, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-3P-3, SC-65-3, FQA34N20L pinout, FQA34N20L datasheet PDF, FQA34N20L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA34N20L ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tube 75m Ω @ 17A, 10V ±20V 3.9pF @ 25V 72nC @ 5V 200V TO-3P-3, SC-65-3

FQA34N20L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 640 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3.9pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

FQA34N20L Features


the avalanche energy rating (Eas) is 640 mJ
based on its rated peak drain current 136A.
a 200V drain to source voltage (Vdss)


FQA34N20L Applications


There are a lot of Rochester Electronics, LLC
FQA34N20L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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