FQA28N50F

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Mfr.Part #
FQA28N50F
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 28.4A TO3P
Stock
22,642
In Stock :
22,642

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250µA
Operating Temperature :
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds :
5600 pF @ 25 V
Supplier Device Package :
TO-3P
Current - Continuous Drain (Id) @ 25°C :
28.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
Drain to Source Voltage (Vdss) :
500 V
Vgs (Max) :
±30V
Package / Case :
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs :
160mOhm @ 14.2A, 10V
Power Dissipation (Max) :
310W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
140 nC @ 10 V
Product Status :
Obsolete
Datasheets
FQA28N50F
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FQA28N50F, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-3P-3, SC-65-3, FQA28N50F pinout, FQA28N50F datasheet PDF, FQA28N50F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA28N50F ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5.6pF @ 25V 140nC @ 10V 500V TO-3P-3, SC-65-3

FQA28N50F Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1300 mJ.A device's maximal input capacitance is 5.6pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 28.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 113.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FQA28N50F Features


the avalanche energy rating (Eas) is 1300 mJ
based on its rated peak drain current 113.6A.
a 500V drain to source voltage (Vdss)


FQA28N50F Applications


There are a lot of Rochester Electronics, LLC
FQA28N50F applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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