FQA19N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-3P-3, SC-65-3

Vgs (Max) :

±30V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600 V

Gate Charge (Qg) (Max) @ Vgs :

90 nC @ 10 V

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

3600 pF @ 25 V

FET Feature :

-

Power Dissipation (Max) :

300W (Tc)

Technology :

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C :

18.5A (Tc)

Supplier Device Package :

TO-3PN

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

380mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id :

5V @ 250µA