FPN660A
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- Mfr.Part #
- FPN660A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO226
- Stock
- 1,951
- In Stock ：
- 1,951
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Supplier Device Package :
- TO-226
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Frequency - Transition :
- 75MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Transistor Type :
- PNP
- Power - Max :
- 1 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA, 2V
- Product Status :
- Obsolete
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Current - Collector (Ic) (Max) :
- 3 A
- Datasheets
- FPN660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
FPN660A Overview
In this device, the DC current gain is 250 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 200mA, 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
FPN660A Features
the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 400mV @ 200mA, 2A
a transition frequency of 75MHz
FPN660A Applications
There are a lot of Rochester Electronics, LLC
FPN660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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