FJBE2150DTU
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- Mfr.Part #
- FJBE2150DTU
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 800V 2A D2PAK
- Stock
- 40,363
- In Stock ：
- 40,363
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C ~ 125°C (TJ)
- Current - Collector Cutoff (Max) :
- 100µA
- Supplier Device Package :
- D²PAK (TO-263)
- Current - Collector (Ic) (Max) :
- 2 A
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Frequency - Transition :
- 5MHz
- Power - Max :
- 110 W
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 330mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 400mA, 3V
- Transistor Type :
- NPN
- Product Status :
- Obsolete
- Voltage - Collector Emitter Breakdown (Max) :
- 800 V
- Datasheets
- FJBE2150DTU
NPN -55°C~125°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
FJBE2150DTU Overview
This device has a DC current gain of 20 @ 400mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 12V to achieve high efficiency.In this part, there is a transition frequency of 5MHz.The maximum collector current is 2A volts.
FJBE2150DTU Features
the DC current gain for this device is 20 @ 400mA 3V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 330mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 5MHz
FJBE2150DTU Applications
There are a lot of ON Semiconductor
FJBE2150DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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