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FJB3307DTM

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Mfr.Part #: FJB3307DTM

Manufacturer: Fairchild Semiconductor

Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Datasheet: Download

Description: TRANS NPN 400V 8A D2PAK

Stock: 4,800

In Stock ：: 4,800

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Manufacturer :: Fairchild Semiconductor

Product Category :: Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :: -

Transistor Type :: NPN

Product Status :: Active

Mounting Type :: Surface Mount

Current - Collector (Ic) (Max) :: 8 A

Package / Case :: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vce Saturation (Max) @ Ib, Ic :: 3V @ 2A, 8A

Power - Max :: 1.72 W

Frequency - Transition :: -

Supplier Device Package :: D²PAK

Operating Temperature :: 150°C (TJ)

Voltage - Collector Emitter Breakdown (Max) :: 400 V

DC Current Gain (hFE) (Min) @ Ic, Vce :: 5 @ 5A, 5V

Datasheets: FJB3307DTM

VESS Electronics offers Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJB3307DTM, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type：Surface Mount, Package / Case：TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Operating Temperature：150°C (TJ), FJB3307DTM pinout, FJB3307DTM datasheet PDF, FJB3307DTM amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJB3307DTM ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount

FJB3307DTM Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.

FJB3307DTM Features

the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V

FJB3307DTM Applications

There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.

Inverter
Interface
Driver
Muting

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