FDS86252
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- Mfr.Part #
- FDS86252
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- FDS86252 - N-CHANNEL POWER TRENC
- Stock
- 48,386
- In Stock ：
- 48,386
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 2.5W (Ta), 5W (Tc)
- Drain to Source Voltage (Vdss) :
- 150 V
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A (Ta)
- Supplier Device Package :
- 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 955 pF @ 75 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Feature :
- -
- Technology :
- MOSFET (Metal Oxide)
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 4.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 15 nC @ 10 V
- Datasheets
- FDS86252
N-Channel Tape & Reel (TR) 55m Ω @ 4.5A, 10V ±20V 955pF @ 75V 15nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS86252 Description
FDS86252 is made with Fairchild Semiconductor's innovative Power Trench technology, which is specifically optimized to reduce on-state resistance while maintaining exceptional switching performance.
FDS86252 Features
VGS = 10 V, ID = 4.5 A, max rDS(on) = 55 mQ
VGS = 6 V, ID = 3.7 A, max rDS(on) = 80 mQ
Extremely low rDS with high-performance trench technology (on)
High power and current management in a widely used surface mount package that has been 100% UIL tested
Compliant with RoHS
FDS86252 Applications
C-DC Conversion.
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