FDS6892A
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- Mfr.Part #
- FDS6892A
- Manufacturer
- onsemi
- Package / Case
- -
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 5,349
- In Stock ：
- 5,349
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Technology :
- -
- Vgs(th) (Max) @ Id :
- -
- Mounting Type :
- -
- Current - Continuous Drain (Id) @ 25°C :
- -
- Supplier Device Package :
- -
- Operating Temperature :
- -
- Power Dissipation (Max) :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Vgs (Max) :
- -
- FET Type :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- Package / Case :
- -
- Drain to Source Voltage (Vdss) :
- -
- FET Feature :
- -
- Product Status :
- Active
- Datasheets
- FDS6892A
FDS6892A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6892A Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6892A Features
7.5 A, 20 V
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 24 mΩ @ VGS = 2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6892A Applications
This product is general usage and suitable for many different applications.
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