FDS3512

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Mfr.Part #
FDS3512
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET N-CH 80V 4A 8SOIC
Stock
4,600
In Stock :
4,600

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
80 V
Current - Continuous Drain (Id) @ 25°C :
4A (Ta)
FET Type :
N-Channel
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
4V @ 250µA
Technology :
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs :
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
634 pF @ 40 V
Power Dissipation (Max) :
2.5W (Ta)
FET Feature :
-
Rds On (Max) @ Id, Vgs :
70mOhm @ 4A, 10V
Vgs (Max) :
±20V
Operating Temperature :
-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Mounting Type :
Surface Mount
Product Status :
Active
Datasheets
FDS3512
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FDS3512, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, FDS3512 pinout, FDS3512 datasheet PDF, FDS3512 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS3512 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 70m Ω @ 4A, 10V ±20V 634pF @ 40V 18nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS3512 Description


FDS3512 is an 80V N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDS3512 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET FDS3512 features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 



FDS3512 Features


  • 4.0 A, 80 V

  • RDS(ON) = 70 mΩ @ VGS = 10 V

  • RDS(ON) = 80 mΩ @ VGS = 6 V

  • Low gate charge (13nC typical)

  • Fast switching speed

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS3512 Applications


  • cellular phones 

  • laptop computers

  • photovoltaic systems 

  • wind turbines

  • shunt voltage regulator and the series voltage regulator


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