FDN358P
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- Mfr.Part #
- FDN358P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 6,638
- In Stock ：
- 6,638
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A (Ta)
- FET Type :
- P-Channel
- Technology :
- MOSFET (Metal Oxide)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max) :
- 500mW (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6 nC @ 10 V
- Supplier Device Package :
- SuperSOT-3
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 182 pF @ 15 V
- Product Status :
- Active
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 1.5A, 10V
- FET Feature :
- -
- Datasheets
- FDN358P
P-Channel Tape & Reel (TR) 125m Ω @ 1.5A, 10V ±20V 182pF @ 15V 5.6nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
FDN358P Description
FDN358P is a type of P-channel logic-level PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench technology which makes this device capable of minimizing on-state resistance and maintaining low gate charge. It is well suited for portable electronics applications including load switching, power management, DC-DC conversion, and battery charging circuits.
FDN358P Features
-
Extremely low RDS(ON)
-
High-performance trench technology
-
Low gate charge
-
Low on-state resistance
-
Available in the SuperSOT?-3 package
FDN358P Applications
-
Load switching
-
Power management
-
DC-DC conversion
-
Battery charging circuits
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