FDN352AP
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- Mfr.Part #
- FDN352AP
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 24,192
- In Stock ：
- 24,192
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A (Ta)
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 500mW (Ta)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Technology :
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) :
- 30 V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.9 nC @ 4.5 V
- Vgs (Max) :
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 150 pF @ 15 V
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 1.3A, 10V
- FET Feature :
- -
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Type :
- P-Channel
- Datasheets
- FDN352AP
P-Channel Tape & Reel (TR) 180m Ω @ 1.3A, 10V ±25V 150pF @ 15V 1.9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN352AP belongs to the family of single P-channel PowerTrench? MOSFET. Based on the advanced power trench process, it is able to achieve the minimum of the on-state resistance and maintain low gate charge for superior switching performance. It is designed to be used for low-voltage and battery-powered applications in a small surface-mounted package requiring low in-line power loss, such as notebook computer power management.
FDN352AP Features
Advanced power trench process
Drain-source voltage of -30V
Operating temperature of -55 °C to 150 °C
Available in the high power version of industry standard SOT-23 package
FDN352AP Applications
Low-voltage and battery-powered applications
Notebook computer power management
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