FDN352AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

180mOhm @ 1.3A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

2.5V @ 250µA

Power Dissipation (Max) :

500mW (Ta)

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.3A (Ta)

Vgs (Max) :

±25V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30 V

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

150 pF @ 15 V

Gate Charge (Qg) (Max) @ Vgs :

1.9 nC @ 4.5 V

Mounting Type :

Surface Mount

FET Feature :

-

Supplier Device Package :

SOT-23-3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V