FDMT800150DC
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- Mfr.Part #
- FDMT800150DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 15A/99A 8DUAL
- Stock
- 2,910
- In Stock ：
- 2,910
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 15A (Ta), 99A (Tc)
- Product Status :
- Active
- Package / Case :
- 8-PowerVDFN
- Rds On (Max) @ Id, Vgs :
- 6.5mOhm @ 15A, 10V
- FET Feature :
- -
- Vgs (Max) :
- ±20V
- Technology :
- MOSFET (Metal Oxide)
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 108 nC @ 10 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Supplier Device Package :
- 8-Dual Cool™88
- Drain to Source Voltage (Vdss) :
- 150 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 3.2W (Ta), 156W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 8205 pF @ 75 V
- Datasheets
- FDMT800150DC
N-Channel Tape & Reel (TR) 6.5m Ω @ 15A, 10V ±20V 8205pF @ 75V 108nC @ 10V 150V 8-PowerVDFN
FDMT800150DC MOSFET Description
This N-Channel MOSFET is produced using an advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMT800150DC MOSFET Features
Low profile 8x8mm MLP package
Next-generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A
Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A
RoHS Compliant
100% UIL tested
FDMT800150DC MOSFET Applications
Oring FET / Load Switch
MCU
Synchronous Rectification
DC-DC Conversion
Arduino
Lighting
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