FDMS8350L

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Mfr.Part #
FDMS8350L
Manufacturer
Fairchild Semiconductor
Package / Case
8-PowerTDFN
Datasheet
Download
Description
FDMS8350L - N-CHANNEL POWERTRENC
Stock
2,360
In Stock :
2,360

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
0.85mOhm @ 47A, 10V
Package / Case :
8-PowerTDFN
Operating Temperature :
-55°C ~ 150°C (TJ)
Supplier Device Package :
Power56
Product Status :
Obsolete
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
17500 pF @ 20 V
Vgs (Max) :
±20V
Technology :
MOSFET (Metal Oxide)
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
40 V
Current - Continuous Drain (Id) @ 25°C :
47A (Ta), 290A (Tc)
Gate Charge (Qg) (Max) @ Vgs :
242 nC @ 10 V
FET Feature :
-
Power Dissipation (Max) :
2.7W (Ta), 113W (Tc)
FET Type :
N-Channel
Datasheets
FDMS8350L
VESS Electronics offers Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMS8350L, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:8-PowerTDFN, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, FDMS8350L pinout, FDMS8350L datasheet PDF, FDMS8350L amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMS8350L ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 0.85m Ω @ 47A, 10V ±20V 17500pF @ 20V 242nC @ 10V 40V 8-PowerTDFN

Description


The FDMS8350L is a 40V, 290A, 0.85mΩ N-Channel PowerTrench? MOSFET. This N-Channel MOSFET is made with the PowerTrench? technology, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance.



Features


● MSL1 robust package design

● 100% UIL tested

● RoHS Compliant

● Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A

● Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A

● Advanced Package and Silicon combination for low rDS(on) and high efficiency



Applications


● Primary DC-DC MOSFET

● Secondary Synchronous Rectifier

● Load Switch

● Inverter

● In Digital Circuit

● High Frequency Amplifier


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