FDMS7670

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Mfr.Part #
FDMS7670
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Stock
21,859
In Stock :
21,859

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Power Dissipation (Max) :
2.5W (Ta), 62W (Tc)
FET Feature :
-
Gate Charge (Qg) (Max) @ Vgs :
56 nC @ 10 V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds :
4105 pF @ 15 V
Technology :
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C :
21A (Ta), 42A (Tc)
FET Type :
N-Channel
Product Status :
Active
Rds On (Max) @ Id, Vgs :
3.8mOhm @ 21A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Package / Case :
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Drain to Source Voltage (Vdss) :
30 V
Datasheets
FDMS7670
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FDMS7670, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, FDMS7670 pinout, FDMS7670 datasheet PDF, FDMS7670 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS7670 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 3.8m Ω @ 21A, 10V ±20V 4105pF @ 15V 56nC @ 10V 8-PowerTDFN

FDMS7670 Description


FDMS7670 is a 30v N-Channel PowerTrench? MOSFET. The onsemi FDMS7670  has been designed to improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMS7670 has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.



FDMS7670 Features


  • Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A

  • Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17

  • Advanced Package and Silicon design for low rDS(on) and high efficiency

  • Next-generation enhanced body diode technology, engineered for soft recovery.  Provides  Schottky-like performance with minimum EMI in sync buck converter applications.

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS7670 Applications


  • IMVP Vcore Switching for Notebook

  • VRM Vcore Switching for Desktop and Server

  • OringFET 1 Load Switch

  • DC-DC Conversion


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