FDMS3662
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- Mfr.Part #
- FDMS3662
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 8.9A/49A 8PQFN
- Stock
- 16,382
- In Stock ：
- 16,382
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250µA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 75 nC @ 10 V
- Vgs (Max) :
- ±20V
- Technology :
- MOSFET (Metal Oxide)
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 14.8mOhm @ 8.9A, 10V
- FET Type :
- N-Channel
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Supplier Device Package :
- 8-PQFN (5x6)
- Power Dissipation (Max) :
- 2.5W (Ta), 104W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 8.9A (Ta), 49A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4620 pF @ 50 V
- Mounting Type :
- Surface Mount
- Datasheets
- FDMS3662
N-Channel Tape & Reel (TR) 14.8m Ω @ 8.9A, 10V ±20V 4620pF @ 50V 75nC @ 10V 8-PowerTDFN
FDMS3662 Description
The FDMS3662 N-Channel MOSFET is made with Fairchild Semiconductor's innovative Power Trench process, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance.
FDMS3662 Features
At Vgs = 10V, Id = 8.9A, Maxds(o n) = 14.8mQ.
MSL1 durable package design with advanced packaging and silicon combination for low rDS(on).
Compliant with RoHS
FDMS3662 Applications
DC - DC Con version
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