FDMS3600S
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- Mfr.Part #
- FDMS3600S
- Manufacturer
- onsemi
- Package / Case
- -
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 15A/30A 8PQFN
- Stock
- 13,303
- In Stock ：
- 13,303
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Package / Case :
- -
- Drain to Source Voltage (Vdss) :
- -
- Mounting Type :
- -
- Supplier Device Package :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- FET Type :
- -
- Operating Temperature :
- -
- Vgs(th) (Max) @ Id :
- -
- Power - Max :
- -
- Current - Continuous Drain (Id) @ 25°C :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Product Status :
- Obsolete
- FET Feature :
- -
- Datasheets
- FDMS3600S
FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
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At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
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Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
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Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
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Conforms to RoHS
FDMS3600S Applications
Notebook PC
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