FDMS0310S
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- Mfr.Part #
- FDMS0310S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A/42A 8PQFN
- Stock
- 2,140
- In Stock ：
- 2,140
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 30 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs :
- 4mOhm @ 18A, 10V
- Product Status :
- Active
- Package / Case :
- 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820 pF @ 15 V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 46 nC @ 10 V
- Power Dissipation (Max) :
- 2.5W (Ta), 46W (Tc)
- Technology :
- MOSFET (Metal Oxide)
- Supplier Device Package :
- 8-PQFN (5x6)
- Current - Continuous Drain (Id) @ 25°C :
- 19A (Ta), 42A (Tc)
- Datasheets
- FDMS0310S
N-Channel Tape & Reel (TR) 4m Ω @ 18A, 10V ±20V 2820pF @ 15V 46nC @ 10V 30V 8-PowerTDFN
FDMS0310S Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2820pF @ 15V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 19A.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 90A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDMS0310S Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 42A
the turn-off delay time is 28 ns
based on its rated peak drain current 90A.
a 30V drain to source voltage (Vdss)
FDMS0310S Applications
There are a lot of ON Semiconductor
FDMS0310S applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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