FDMS0310AS
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- Mfr.Part #
- FDMS0310AS
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A/22A 8PQFN
- Stock
- 8,596
- In Stock ：
- 8,596
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 30 V
- Gate Charge (Qg) (Max) @ Vgs :
- 37 nC @ 10 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs :
- 4.3mOhm @ 19A, 10V
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 19A (Ta), 22A (Tc)
- FET Feature :
- -
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2280 pF @ 15 V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Supplier Device Package :
- 8-PQFN (5x6)
- Power Dissipation (Max) :
- 2.5W (Ta), 41W (Tc)
- Technology :
- MOSFET (Metal Oxide)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Datasheets
- FDMS0310AS
N-Channel Tape & Reel (TR) 4.3m Ω @ 19A, 10V ±20V 2280pF @ 15V 37nC @ 10V 8-PowerTDFN
FDMS0310AS Description
The FDMS0310AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS0310AS Features
Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 19 A
Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
SyncFETTM Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS0310AS Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low-side switch
Networking Point of Load low-side switch
Telecom secondary side rectification
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