FDMC86520L
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- Mfr.Part #
- FDMC86520L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 23,236
- In Stock ：
- 23,236
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs :
- 7.9mOhm @ 13.5A, 10V
- Package / Case :
- 8-PowerWDFN
- Technology :
- MOSFET (Metal Oxide)
- FET Feature :
- -
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550 pF @ 30 V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 64 nC @ 10 V
- Power Dissipation (Max) :
- 2.3W (Ta), 40W (Tc)
- Supplier Device Package :
- 8-MLP (3.3x3.3)
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A (Ta), 22A (Tc)
- Datasheets
- FDMC86520L
N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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