FDMC86340ET80

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Mfr.Part #
FDMC86340ET80
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 80V 14A/68A POWER33
Stock
26,667
In Stock :
26,667

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Operating Temperature :
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C :
14A (Ta), 68A (Tc)
Product Status :
Active
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
Vgs (Max) :
±20V
Technology :
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs :
49 nC @ 10 V
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
2775 pF @ 40 V
Rds On (Max) @ Id, Vgs :
6.5mOhm @ 14A, 10V
Drain to Source Voltage (Vdss) :
80 V
Supplier Device Package :
Power33
Package / Case :
8-PowerWDFN
Datasheets
FDMC86340ET80
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FDMC86340ET80, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, FDMC86340ET80 pinout, FDMC86340ET80 datasheet PDF, FDMC86340ET80 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86340ET80 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 6.5m Ω @ 14A, 10V ±20V 2775pF @ 40V 49nC @ 10V 8-PowerWDFN

FDMC86340ET80 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2775pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (8V 10V).

FDMC86340ET80 Features


a continuous drain current (ID) of 68A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 23 ns


FDMC86340ET80 Applications


There are a lot of ON Semiconductor
FDMC86340ET80 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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