FDMC2610

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Mfr.Part #
FDMC2610
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 200V 2.2A/9.5A 8MLP
Stock
12,258
In Stock :
12,258

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Voltage (Vdss) :
200 V
Gate Charge (Qg) (Max) @ Vgs :
18 nC @ 10 V
Power Dissipation (Max) :
2.1W (Ta), 42W (Tc)
FET Feature :
-
Rds On (Max) @ Id, Vgs :
200mOhm @ 2.2A, 10V
FET Type :
N-Channel
Vgs (Max) :
±20V
Product Status :
Active
Mounting Type :
Surface Mount
Technology :
MOSFET (Metal Oxide)
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerWDFN
Current - Continuous Drain (Id) @ 25°C :
2.2A (Ta), 9.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
960 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Supplier Device Package :
8-MLP (3.3x3.3)
Datasheets
FDMC2610
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FDMC2610, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:8-PowerWDFN, FDMC2610 pinout, FDMC2610 datasheet PDF, FDMC2610 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC2610 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 200m Ω @ 2.2A, 10V ±20V 960pF @ 100V 18nC @ 10V 8-PowerWDFN

FDMC2610    Description


The N-channel MOSFET is a rugged gate version of advanced power trench technology. It has been optimized for power management applications.


FDMC2610         Features

 

Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A

Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A

Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm

RoHS Compliant


FDMC2610         Applications


This product is general usage and suitable for many different applications.

 




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