FDMC2514SDC
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- Mfr.Part #
- FDMC2514SDC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 24A/40A DLCOOL33
- Stock
- 47,898
- In Stock ：
- 47,898
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2705 pF @ 13 V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 3W (Ta), 60W (Tc)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 44 nC @ 10 V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- Dual Cool ™ 33
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 24A (Ta), 40A (Tc)
- Technology :
- MOSFET (Metal Oxide)
- Rds On (Max) @ Id, Vgs :
- 3.5mOhm @ 22.5A, 10V
- Drain to Source Voltage (Vdss) :
- 25 V
- Product Status :
- Obsolete
- Datasheets
- FDMC2514SDC
N-Channel Tape & Reel (TR) 3.5m Ω @ 22.5A, 10V ±20V 2705pF @ 13V 44nC @ 10V 8-PowerTDFN
FDMC2514SDC Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
FDMC2514SDC Features
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A
Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
High-performance technology for extremely low RDS(on)
SyncFET Schottky Body Diode
RoHS Compliant
FDMC2514SDC Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
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