FDM3622

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Mfr.Part #
FDM3622
Manufacturer
Fairchild Semiconductor
Package / Case
8-PowerWDFN
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Stock
7,563
In Stock :
7,563

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
60mOhm @ 4.4A, 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Technology :
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds :
1090 pF @ 25 V
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Supplier Device Package :
8-MLP (3.3x3.3)
Vgs (Max) :
±20V
FET Type :
N-Channel
FET Feature :
-
Current - Continuous Drain (Id) @ 25°C :
4.4A (Ta)
Gate Charge (Qg) (Max) @ Vgs :
17 nC @ 10 V
Power Dissipation (Max) :
2.1W (Ta)
Package / Case :
8-PowerWDFN
Product Status :
Active
Datasheets
FDM3622
VESS Electronics offers Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDM3622, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:8-PowerWDFN, FDM3622 pinout, FDM3622 datasheet PDF, FDM3622 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDM3622 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 60m Ω @ 4.4A, 10V ±20V 1090pF @ 25V 17nC @ 10V 8-PowerWDFN

FDM3622 Description


FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.



FDM3622 Features


  • Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A

  • Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A

  • Low Miller Charge

  • Low QRR Body Diode

  • Optimized efficiency at high frequencies

  • UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744

  • RoHS Compliant



FDM3622 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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