FDM3622
- Mfr.Part #
- FDM3622
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 7,563
- In Stock :
- 7,563
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 4.4A, 10V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Technology :
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090 pF @ 25 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- Supplier Device Package :
- 8-MLP (3.3x3.3)
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- FET Feature :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A (Ta)
- Gate Charge (Qg) (Max) @ Vgs :
- 17 nC @ 10 V
- Power Dissipation (Max) :
- 2.1W (Ta)
- Package / Case :
- 8-PowerWDFN
- Product Status :
- Active
- Datasheets
- FDM3622
N-Channel Tape & Reel (TR) 60m Ω @ 4.4A, 10V ±20V 1090pF @ 25V 17nC @ 10V 8-PowerWDFN
FDM3622 Description
FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDM3622 Features
-
Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
-
Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
-
Low Miller Charge
-
Low QRR Body Diode
-
Optimized efficiency at high frequencies
-
UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744
-
RoHS Compliant
FDM3622 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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| FDM3622 | Fairchild Semiconductor | 2 | MOSFET N-CH 100V 4.4A 8MLP |












