FDD6796A
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- Mfr.Part #
- FDD6796A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 20A/40A TO252
- Stock
- 25,658
- In Stock ：
- 25,658
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 34 nC @ 10 V
- Rds On (Max) @ Id, Vgs :
- 5.7mOhm @ 20A, 10V
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1780 pF @ 13 V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Ta), 40A (Tc)
- Power Dissipation (Max) :
- 3.7W (Ta), 42W (Tc)
- Drain to Source Voltage (Vdss) :
- 25 V
- Supplier Device Package :
- TO-252, (D-Pak)
- Technology :
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Type :
- N-Channel
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Feature :
- -
- Vgs (Max) :
- ±20V
- Datasheets
- FDD6796A
N-Channel Tape & Reel (TR) 5.7m Ω @ 20A, 10V ±20V 1780pF @ 13V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6796A Description
With either synchronous or traditional switching FWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low gs(on), and quick switching speed have all been optimized for. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
FDD6796A Features
-
Max ())=5.7 mQ at lD = 20 A and VGS = 10 V.
-
Max rQS(on) is 15.0 mQ at 4.5 V and ID is 15.2 A.
-
UlL testing is complete.
-
RoHS Compliant.
FDD6796A Applications
-
Vcore DC-DC for Servers and Desktop Computers
-
Intermediate Bus Architecture with VRM
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