FDD6780A
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- Mfr.Part #
- FDD6780A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- 16.4A, 25V, 0.0086OHM, N-CHANNEL
- Stock
- 12,051
- In Stock ：
- 12,051
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Technology :
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) :
- 25 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1235 pF @ 13 V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs :
- 8.6mOhm @ 16.4A, 10V
- FET Feature :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 24 nC @ 10 V
- Supplier Device Package :
- D-PAK (TO-252)
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 16.4A (Ta), 30A (Tc)
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 3.7W (Ta), 32.6W (Tc)
- Datasheets
- FDD6780A
N-Channel Tape & Reel (TR) 8.6m Ω @ 16.4A, 10V ±20V 1235pF @ 13V 24nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6780A Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 24 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1235pF @ 13V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Drain current refers to the maximum continuous current a device can conduct, and it is 48A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 16 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDD6780A Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 16.4A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 16 ns
FDD6780A Applications
There are a lot of ON Semiconductor
FDD6780A applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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