FDC855N
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- Mfr.Part #
- FDC855N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.1A SUPERSOT6
- Stock
- 59
- In Stock ：
- 59
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 27mOhm @ 6.1A, 10V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds :
- 655 pF @ 15 V
- FET Feature :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 13 nC @ 10 V
- Power Dissipation (Max) :
- 1.6W (Ta)
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A (Ta)
- Technology :
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Supplier Device Package :
- SuperSOT™-6
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDC855N
N-Channel Tape & Reel (TR) 27m Ω @ 6.1A, 10V ±20V 655pF @ 15V 13nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC855N Description
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery-powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench? process, this device possesses minimized on-state resistance to optimize power consumption. They are ideal for applications where in-line power loss is critical.
FDC855N Features
Max rDS(on) = 27m? at VGS = 10V, ID = 6.1A
Max rDS(on) = 36m? at VGS = 4.5V, ID = 5.3A
SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick).
RoHS Compliant
FDC855N Applications
Power Management in Notebook, Hard Disk Drive
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