FDC3535
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- Mfr.Part #
- FDC3535
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 80V 2.1A SUPERSOT6
- Stock
- 19,742
- In Stock ：
- 19,742
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 1.6W (Ta)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Supplier Device Package :
- SuperSOT™-6
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 880 pF @ 40 V
- Technology :
- MOSFET (Metal Oxide)
- Gate Charge (Qg) (Max) @ Vgs :
- 20 nC @ 10 V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Vgs (Max) :
- ±20V
- FET Feature :
- -
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 183mOhm @ 2.1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A (Ta)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Datasheets
- FDC3535
P-Channel Tape & Reel (TR) 183m Ω @ 2.1A, 10V ±20V 880pF @ 40V 20nC @ 10V 80V SOT-23-6 Thin, TSOT-23-6
FDC3535 MOSFET Description
This P-Channel MOSFET FDC3535 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The FDC3535 has a maximum on-resistance of 233 mΩ (VGS @-4.5 V) and its nominal Gate-Source Voltage is ±20V.
FDC3535 MOSFET Features
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC3535 MOSFET Applications
IGBTs and MOSFETs
Inductors
Bridge Configurations
Synchronous Rectifiers
AC Motor Speed Control
Switched Reluctance Motor Drivers
High-side P-Channel Devices
Dual Forward Converters
Current Control
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