FDB8876

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Mfr.Part #
FDB8876
Manufacturer
onsemi
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 71A TO263AB
Stock
20,610
In Stock :
20,610

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
30 V
Power Dissipation (Max) :
70W (Tc)
FET Feature :
-
Technology :
MOSFET (Metal Oxide)
Operating Temperature :
-55°C ~ 175°C (TJ)
FET Type :
N-Channel
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Product Status :
Obsolete
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
71A (Tc)
Supplier Device Package :
D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds :
1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs :
45 nC @ 10 V
Rds On (Max) @ Id, Vgs :
8.5mOhm @ 40A, 10V
Datasheets
FDB8876
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi FDB8876, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 175°C (TJ), Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, FDB8876 pinout, FDB8876 datasheet PDF, FDB8876 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB8876 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 8.5m Ω @ 40A, 10V ±20V 1.7pF @ 15V 45nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB8876 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 180 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.7pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 71A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

FDB8876 Features


the avalanche energy rating (Eas) is 180 mJ
a 30V drain to source voltage (Vdss)


FDB8876 Applications


There are a lot of Rochester Electronics, LLC
FDB8876 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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