FDB86135
- Mfr.Part #
- FDB86135
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 17,147
- In Stock :
- 17,147
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Technology :
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C :
- 75A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7295 pF @ 25 V
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 2.4W (Ta), 227W (Tc)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Feature :
- -
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.5mOhm @ 75A, 10V
- Supplier Device Package :
- D²PAK (TO-263)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 116 nC @ 10 V
- Product Status :
- Active
- Datasheets
- FDB86135
N-Channel Tape & Reel (TR) 3.5m Ω @ 75A, 10V ±20V 7295pF @ 25V 116nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB86135 Discription
This N-channel MOSFET FDB86135 is produced by Xiantong's advanced power gate process, which combines screen door technology. The process is optimized for on-resistance while maintaining excellent switching performance.
FDB86135 Features
·Shielded Gate MOSFET Technology
·Max RDs(on)= 3.5mΩat VGs=10V,ID=75A.
·Fast Switching Speed
·Low Gate Charge
·High Performance Trench Technology for Extremely Low RDS(on)
·High Power and Current Handling Capability
·RoHS Compliant
FDB86135 Applications
·DC-DC primary bridge
·DC-DC Synchronous rectification
· Hot swap
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