FDB8443
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- Mfr.Part #
- FDB8443
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 25A/120A TO263AB
- Stock
- 5,028
- In Stock ：
- 5,028
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Technology :
- MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 25A (Ta), 120A (Tc)
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 80A, 10V
- Power Dissipation (Max) :
- 188W (Tc)
- Product Status :
- Active
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9310 pF @ 25 V
- Supplier Device Package :
- D2PAK (TO-263)
- FET Feature :
- -
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 40 V
- Gate Charge (Qg) (Max) @ Vgs :
- 185 nC @ 10 V
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Datasheets
- FDB8443
N-Channel Tape & Reel (TR) 3m Ω @ 80A, 10V ±20V 9310pF @ 25V 185nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8443 Overview
A device's maximum input capacitance is 9310pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 80A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FDB8443 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 55 ns
FDB8443 Applications
There are a lot of ON Semiconductor
FDB8443 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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