EPC8009
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- Mfr.Part #
- EPC8009
- Manufacturer
- EPC
- Package / Case
- Die
- Datasheet
- Download
- Description
- GANFET N-CH 65V 4A DIE
- Stock
- 14,038
- In Stock ：
- 14,038
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- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 52 pF @ 32.5 V
- Gate Charge (Qg) (Max) @ Vgs :
- 0.45 nC @ 5 V
- Product Status :
- Active
- Package / Case :
- Die
- Vgs (Max) :
- +6V, -4V
- Supplier Device Package :
- Die
- Power Dissipation (Max) :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- Mounting Type :
- Surface Mount
- Technology :
- GaNFET (Gallium Nitride)
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Drain to Source Voltage (Vdss) :
- 65 V
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta)
- FET Feature :
- -
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 500mA, 5V
- Datasheets
- EPC8009
N-Channel Tape & Reel (TR) 130mOhm @ 500mA, 5V +6V, -4V 52pF @ 32.5V 0.45nC @ 5V 65V Die
EPC8009 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 52pF @ 32.5V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.7A.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 65V.Using drive voltage (5V) reduces this device's overall power consumption.
EPC8009 Features
a continuous drain current (ID) of 2.7A
a 65V drain to source voltage (Vdss)
EPC8009 Applications
There are a lot of EPC
EPC8009 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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