EPC2016C
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- Mfr.Part #
- EPC2016C
- Manufacturer
- EPC
- Package / Case
- Die
- Datasheet
- Download
- Description
- GANFET N-CH 100V 18A DIE
- Stock
- 15,452
- In Stock ：
- 15,452
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- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 4.5 nC @ 5 V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- +6V, -4V
- Supplier Device Package :
- Die
- Current - Continuous Drain (Id) @ 25°C :
- 18A (Ta)
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100 V
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 11A, 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 420 pF @ 50 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- Package / Case :
- Die
- FET Feature :
- -
- Technology :
- GaNFET (Gallium Nitride)
- Vgs(th) (Max) @ Id :
- 2.5V @ 3mA
- Power Dissipation (Max) :
- -
- Datasheets
- EPC2016C
N-Channel Tape & Reel (TR) 16mOhm @ 11A, 5V +6V, -4V 420pF @ 50V 4.5nC @ 5V 100V Die
EPC2016C Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 420pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (5V) reduces this device's overall power consumption.
EPC2016C Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 12mOhm
a 100V drain to source voltage (Vdss)
EPC2016C Applications
There are a lot of EPC
EPC2016C applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| EPC200-CSP5 | EPC | 694 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 15,087 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 33,406 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 27,476 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 39,486 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 48,885 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 12,863 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 17,557 | GANFET N-CH 200V 3A DIE |
| EPC2012C | EPC | 38,057 | GANFET N-CH 200V 5A DIE OUTLINE |
| EPC2014 | EPC | 15,929 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 32,219 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 9,526 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 21,387 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 23,626 | GANFET N-CH 100V 11A DIE |
| EPC2018 | EPC | 48,938 | GANFET N-CH 150V 12A DIE |
