DXT2011P5Q-13
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- Mfr.Part #
- DXT2011P5Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A POWERDI5
- Stock
- 4,927
- In Stock ：
- 4,927
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20nA (ICBO)
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 500mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A, 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package / Case :
- PowerDI™ 5
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power - Max :
- 3.2 W
- Supplier Device Package :
- PowerDI™ 5
- Frequency - Transition :
- 130MHz
- Current - Collector (Ic) (Max) :
- 6 A
- Mounting Type :
- Surface Mount
- Datasheets
- DXT2011P5Q-13
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2011P5Q-13 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 220mV @ 500mA, 5A.As a result, the part has a transition frequency of 130MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
DXT2011P5Q-13 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 220mV @ 500mA, 5A
a transition frequency of 130MHz
DXT2011P5Q-13 Applications
There are a lot of Diodes Incorporated
DXT2011P5Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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