CSD25201W15
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- Mfr.Part #
- CSD25201W15
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 9DSBGA
- Stock
- 18,553
- In Stock ：
- 18,553
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 20 V
- Package / Case :
- 9-UFBGA, DSBGA
- Power Dissipation (Max) :
- 1.5W (Ta)
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds :
- 510 pF @ 10 V
- Vgs(th) (Max) @ Id :
- 1.1V @ 250µA
- Technology :
- MOSFET (Metal Oxide)
- Rds On (Max) @ Id, Vgs :
- 40mOhm @ 2A, 4.5V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Mounting Type :
- Surface Mount
- FET Feature :
- -
- Supplier Device Package :
- 9-DSBGA
- Vgs (Max) :
- -6V
- Product Status :
- Obsolete
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6 nC @ 4.5 V
- Datasheets
- CSD25201W15
P-Channel Tape & Reel (TR) 40m Ω @ 2A, 4.5V 510pF @ 10V 5.6nC @ 4.5V 20V 9-UFBGA, DSBGA
CSD25201W15 Description
CSD25201W15 is a -20v P-Channel NexFET? Power MOSFET. The transistor CSD25201W15 has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the CSD25201W15 ideal for battery-operated space-constrained applications.
CSD25201W15 Features
-
Low Resistance
-
Small Footprint 1.5-mm x 1.5-mm
-
Gate ESD Protection - 3kV
-
Pb Free
-
RoHS Compliant
-
Halogen Free
-
Gate-Source Voltage Clamp
CSD25201W15 Applications
-
Monitor
-
Electric vehicle systems: energy recovery
-
Computation
-
Communication
-
Battery Management
-
Battery Protection
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