CSD22202W15
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- Mfr.Part #
- CSD22202W15
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 8V 10A 9DSBGA
- Stock
- 26,975
- In Stock ：
- 26,975
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1.1V @ 250µA
- FET Feature :
- -
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 10A (Ta)
- Package / Case :
- 9-UFBGA, DSBGA
- Supplier Device Package :
- 9-DSBGA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Technology :
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) :
- 8 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs :
- 12.2mOhm @ 2A, 4.5V
- FET Type :
- P-Channel
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 1390 pF @ 4 V
- Power Dissipation (Max) :
- 1.5W (Ta)
- Vgs (Max) :
- -6V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4 nC @ 4.5 V
- Datasheets
- CSD22202W15
P-Channel Tape & Reel (TR) 12.2m Ω @ 2A, 4.5V 1390pF @ 4V 8.4nC @ 4.5V 9-UFBGA, DSBGA
CSD22202W15 Description
CSD22202W15 is a -8V P channel NexFET? power MOSFET. The CSD22202W15 is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the CSD22202W15 ideal for battery-operated space-constrained applications.
CSD22202W15 Features
-
Low Resistance
-
Small Footprint 1.5 mm × 1.5 mm
-
Pb Free
-
Gate ESD Protection
-
RoHS Compliant
-
Halogen Free
-
Gate-Source Voltage Clamp
CSD22202W15 Applications
-
Battery Management
-
Battery Protection
-
Load Switch Applications
-
Electric vehicle systems
-
Computation
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