CSD18501Q5A

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Mfr.Part #
CSD18501Q5A
Manufacturer
Texas Instruments
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 22A/100A 8VSON
Stock
1,634
In Stock :
1,634

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Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
50 nC @ 10 V
Package / Case :
8-PowerTDFN
Vgs(th) (Max) @ Id :
2.3V @ 250µA
Drain to Source Voltage (Vdss) :
40 V
Input Capacitance (Ciss) (Max) @ Vds :
3840 pF @ 20 V
Power Dissipation (Max) :
3.1W (Ta), 150W (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Supplier Device Package :
8-VSONP (5x6)
Technology :
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs :
3.2mOhm @ 25A, 10V
Product Status :
Active
Vgs (Max) :
±20V
FET Feature :
-
Current - Continuous Drain (Id) @ 25°C :
22A (Ta), 100A (Tc)
Mounting Type :
Surface Mount
Datasheets
CSD18501Q5A
VESS Electronics offers Transistors - FETs, MOSFETs - Single Texas Instruments CSD18501Q5A, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:8-PowerTDFN, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, CSD18501Q5A pinout, CSD18501Q5A datasheet PDF, CSD18501Q5A amp .Beyond Transistors - FETs, MOSFETs - Single Texas Instruments CSD18501Q5A ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Cut Tape (CT) 3.2m Ω @ 25A, 10V ±20V 3840pF @ 20V 50nC @ 10V 8-PowerTDFN

CSD18501Q5A Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3840pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [22A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

CSD18501Q5A Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.8V


CSD18501Q5A Applications


There are a lot of Texas Instruments
CSD18501Q5A applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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