CPH3115-TL-E
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- Mfr.Part #
- CPH3115-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A 3CPH
- Stock
- 2,686
- In Stock ：
- 2,686
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Vce Saturation (Max) @ Ib, Ic :
- 375mV @ 15mA, 750mA
- Package / Case :
- SC-96
- Supplier Device Package :
- 3-CPH
- Power - Max :
- 900 mW
- Current - Collector (Ic) (Max) :
- 1.5 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Product Status :
- Active
- Frequency - Transition :
- 450MHz
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA, 2V
- Mounting Type :
- Surface Mount
- Datasheets
- CPH3115-TL-E
PNP 150°C TJ 100nA ICBO 1 Elements SC-96 Tape & Reel (TR) Surface Mount
CPH3115-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 375mV @ 15mA, 750mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 1.5A volts.
CPH3115-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 375mV @ 15mA, 750mA
the emitter base voltage is kept at 5V
CPH3115-TL-E Applications
There are a lot of ON Semiconductor
CPH3115-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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