BULK128
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- Mfr.Part #
- BULK128
- Manufacturer
- STMicroelectronics
- Package / Case
- SOT-82
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A SOT82-3
- Stock
- 31,445
- In Stock ：
- 31,445
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 250µA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Transistor Type :
- NPN
- Supplier Device Package :
- SOT-82-3
- Current - Collector (Ic) (Max) :
- 4 A
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 2A, 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 400 V
- Package / Case :
- SOT-82
- Power - Max :
- 55 W
- Product Status :
- Obsolete
- Operating Temperature :
- 150°C (TJ)
- Datasheets
- BULK128
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN SOT-82 Tube Through Hole
BULK128 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
BULK128 Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BULK128 Applications
There are a lot of STMicroelectronics
BULK128 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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