BSS110

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Mfr.Part #
BSS110
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
MOSFET P-CH 50V 170MA TO92-3
Stock
26,710
In Stock :
26,710

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
-
Mounting Type :
Through Hole
Product Status :
Obsolete
Current - Continuous Drain (Id) @ 25°C :
170mA (Ta)
FET Type :
P-Channel
Vgs (Max) :
-
Power Dissipation (Max) :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
40 pF @ 25 V
Technology :
MOSFET (Metal Oxide)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature :
-
Supplier Device Package :
TO-92-3
Drive Voltage (Max Rds On, Min Rds On) :
-
Vgs(th) (Max) @ Id :
2V @ 1mA
Drain to Source Voltage (Vdss) :
50 V
Rds On (Max) @ Id, Vgs :
10Ohm @ 170mA, 10V
Datasheets
BSS110
VESS Electronics offers Transistors - FETs, MOSFETs - Single onsemi BSS110, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Operating Temperature:-, BSS110 pinout, BSS110 datasheet PDF, BSS110 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi BSS110 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

P-Channel Bulk 10 Ω @ 170mA, 10V 40pF @ 25V 50V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

BSS110 Description


This high cell density, DMOS P-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. This extremely dense technique is meant to minimize on-state resistance, offer tough and dependable performance, and enable quick switching. They can deliver pulsed currents up to 0.68A and can be employed with little effort in the majority of applications requiring up to 0.17A DC. This product is best suited for low voltage applications that need a high side switch with a low current.



BSS110 Features


  • BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.

  • BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V

  • Voltage controlled p-channel small signal switch.

  • High density cell design for low RDS(ON) .

  • High saturation current.



BSS110 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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